| 1. | Metal organic molecular beam epitaxial growth system
有机金属分子束磊晶生长系统 |
| 2. | Gas source molecular beam epitaxial growth system
瓦斯源分子束磊晶生长系统 |
| 3. | Semiconductor superlattice distributed bragg reflector grown by molecular beam epitaxy
的分子束外延生长 |
| 4. | Algan gan heterostructure field effect transistor materials grown by molecular beam epitaxy
生长的跨导为186 |
| 5. | Molecular beam mass spectrometer
调制分子束质谱计 |
| 6. | Molecular beam epitaxy , mbe
分子束磊晶 |
| 7. | We took some experiments using oodr - mpi technique in the static cell for the preparation of the experiment in the molecular beam
为分子束实验做了尝试性的实验(在静态池中) 。 |
| 8. | A planar sige heterojunction bipolar transistor was fabricated using polysilicon emitter technology and sige base grown by molecular beam epitaxy . the sige hbt
室温下该晶体管的直流电流增益为30到50 ，基极开路下，收集极-发射极反向击穿电压 |
| 9. | Main works and results include : ( 1 ) . growth method of self - organized quantum dots was studied . high quality inas self - organized quantum dots were grown by mbe ( molecular beam epitaxy ) technique
本文开展的主要工作和结果有： ( 1 )研究了自组织量子点的生长方法，利用分子束外延技术( mbe )生长出高质量的inas自组织量子点。 |
| 10. | High quality single - crystal zns - based ii - vi thin films have been prepared on gaas and gap substrate using molecular beam epitaxy ( mbe ) technique . successful n - type doping of znsxse1 - x alloy using aluminum source has been carried out
本文研究了在gaas和gap衬底上，本征型和n型al掺杂zns基单晶薄膜的分子束外延生长，获得了高质量的单晶外延薄膜。 |
